Non-linearity compensation in radio frequency switches and devices

ABSTRACT

Radio frequency (RF) switches and devices provide improved switching performance. An RF switch includes at least one field-effect transistor (FET) disposed between a first node and a second node, each of the at least one FET having a respective source, drain, gate, and body, and a compensation circuit connected to the respective drain of the at least one FET that compensates a non-linearity effect generated by the at least one FET.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.14/708,540, filed on May 11, 2015, titled “Semiconductor Devices andMethods Providing Non-Linear Compensation of Field-Effect Transistors,”which is a divisional of U.S. patent application Ser. No. 13/936,170,filed on Jul. 6, 2013, titled “Switch Linearization by Non-LinearCompensation of a Field-Effect Transistor,” which claims priority toU.S. Provisional Application No. 61/669,035, filed on Jul. 7, 2012,titled “Switch Linearization by Non-Linear Compensation of aField-Effect Transistor,” the disclosures of which are herebyincorporated by reference in their entirety.

BACKGROUND

Field

The present disclosure generally relates to the field of electronics,and more particularly, to radio-frequency switches.

Description of Related Art

Radio-frequency (RF) switches, such as transistor switches, can be usedto switch signals between one or more poles and one or more throws.Transistor switches, or portions thereof, can be controlled throughtransistor biasing and/or coupling. Design and use of bias and/orcoupling circuits in connection with RF switches can affect switchingperformance.

SUMMARY

According to some implementations, the present disclosure relates to aradio-frequency (RF) switch that includes at least one field-effecttransistor (FET) disposed between first and second nodes, with each ofthe at least one FET having a respective source and drain. The switchfurther includes a compensation circuit connected to the respectivesource or the respective drain of each of the at least one FET. Thecompensation circuit is configured to compensate a non-linearity effectgenerated by the at least one FET.

In some embodiments, the FET can be a silicon-on-insulator (SOI) FET. Insome embodiments, the compensation circuit can include a non-linearcapacitor. The non-linear capacitor can include ametal-oxide-semiconductor (MOS) capacitor. The MOS capacitor can beconfigured to generate one or more harmonics to substantially cancel thenon-linearity effect generated by the FET. The MOS capacitor can includean FET structure. The one or more harmonics generated by the MOScapacitor can be controlled at least in part by a body bias signalprovided to the FET structure of the MOS capacitor.

In some embodiments, the non-linear capacitor can be connected to thesource of the FET.

In some embodiments, the switch can further include a gate bias circuitconnected to and configured to provide a bias signal to a gate of theFET.

In some embodiments, the switch can further include a body bias circuitconnected to and configured to provide a bias signal to a body of theFET.

In some embodiments, the first node can be configured to receive an RFsignal having a power value and the second node is configured to outputthe RF signal when the FET is in an ON state. The at least one FET caninclude N FETs connected in series, with the quantity N being selectedto allow the switch circuit to handle the power of the RF signal.

In some implementations, the present disclosure relates to a method foroperating a radio-frequency (RF) switch. The method includes controllingat least one field-effect transistor (FET) disposed between first andsecond nodes so that each of the at least one FET is in an ON state oran OFF state. The method further includes compensating a non-lineareffect of the at least one FET by applying another non-linear signal toa respective source or a respective drain of each of the at least oneFET.

In accordance with a number of implementations, the present disclosurerelates to a semiconductor die that includes a semiconductor substrateand at least one field-effect transistor (FET) formed on thesemiconductor substrate. The die further includes a compensation circuitconnected to a respective source or a respective drain of each of the atleast one FET. The compensation circuit is configured to compensate anon-linearity effect generated by the at least one FET.

In some embodiments, the die can further include an insulator layerdisposed between the FET and the semiconductor substrate. The die can bea silicon-on-insulator (SOI) die.

In a number of implementations, the present disclosure relates to amethod for fabricating a semiconductor die. The method includesproviding a semiconductor substrate, and forming at least onefield-effect transistor (FET) on the semiconductor substrate, with eachof the at least one FET having a respective source and a respectivedrain. The method further includes forming a compensation circuit on thesemiconductor substrate. The method further includes connecting thecompensation circuit to the respective source or the respective drain ofeach of the at least one FET to thereby allow the compensation circuitto compensate a non-linearity effect generated by the at least one FET.

In some embodiments, the method can further include forming an insulatorlayer between the FET and the semiconductor substrate.

According to some implementations, the present disclosure relates to aradio-frequency (RF) switch module that includes a packaging substrateconfigured to receive a plurality of components. The module furtherincludes a semiconductor die mounted on the packaging substrate, withthe die having at least one field-effect transistor (FET). The modulefurther includes a compensation circuit connected to a respective sourceor a respective drain of each of the at least one FET. The compensationcircuit is configured to compensate a non-linearity effect generated bythe at least one FET.

In some embodiments, the semiconductor die can be a silicon-on-insulator(SOI) die. In some embodiments, compensation circuit can be part of thesame semiconductor die as the at least one FET. In some embodiments, thecompensation circuit can be part of a second die mounted on thepackaging substrate. In some embodiments, the compensation circuit canbe disposed at a location outside of the semiconductor die.

In some implementations, the present disclosure relates to a wirelessdevice that includes a transceiver configured to process RF signals. Thewireless device further includes an antenna in communication with thetransceiver configured to facilitate transmission of an amplified RFsignal. The wireless device further includes a power amplifier connectedto the transceiver and configured to generate the amplified RF signal.The wireless device further includes a switch connected to the antennaand the power amplifier and configured to selectively route theamplified RF signal to the antenna. The switch includes at least onefield-effect transistor (FET). The switch further includes acompensation circuit connected to a respective source or a respectivedrain of each of the at least one FET. The compensation circuit isconfigured to compensate a non-linearity effect generated by the atleast one FET.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments are depicted in the accompanying drawings forillustrative purposes, and should in no way be interpreted as limitingthe scope of the inventions. In addition, various features of differentdisclosed embodiments can be combined to form additional embodiments,which are part of this disclosure. Throughout the drawings, referencenumbers may be reused to indicate correspondence between referenceelements.

FIG. 1 schematically shows a radio-frequency (RF) switch configured toswitch one or more signals between one or more poles and one or morethrows.

FIG. 2 shows that the RF switch 100 of FIG. 1 can include an RF core andan energy management (EM) core.

FIG. 3 shows an example of the RF core implemented in ansingle-pole-double-throw (SPDT) configuration.

FIG. 4 shows an example of the RF core implemented in an SPDTconfiguration where each switch arm can include a plurality offield-effect transistors (FETs) connected in series.

FIG. 5 schematically shows that controlling of one or more FETs in an RFswitch can be facilitated by a circuit configured to bias and/or coupleone or more portions of the FETs.

FIG. 6 shows examples of the bias/coupling circuit implemented ondifferent parts of a plurality of FETs in a switch arm.

FIGS. 7A and 7B show plan and side sectional views of an examplefinger-based FET device implemented in a silicon-on-insulator (SOI)configuration.

FIGS. 8A and 8B show plan and side sectional views of an example of amultiple-finger FET device implemented in an SOI configuration.

FIG. 9 shows a first example of an RF switch circuit having a non-linearcapacitor connected to a source terminal of an FET and configured to,for example, cancel or reduce non-linearity effects generated by theFET.

FIG. 10 shows that one or more features of FIG. 9 can be implemented ina switch arm having a plurality of FETs.

FIGS. 11A-11D show examples of how various components for biasing,coupling, and/or facilitating the example configurations of FIGS. 9-10can be implemented.

FIGS. 12A and 12B show an example of a packaged module that can includeone or more features described herein.

FIG. 13 shows that in some embodiments, one or more features of thepresent disclosure can be implemented in a switch device such as asingle-pole-multi-throw (SPMT) switch configured to facilitatemulti-band multi-mode wireless operation.

FIG. 14 shows an example of a wireless device that can include one ormore features described herein.

DETAILED DESCRIPTION

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Example Components of a Switching Device

FIG. 1 schematically shows a radio-frequency (RF) switch 100 configuredto switch one or more signals between one or more poles 102 and one ormore throws 104. In some embodiments, such a switch can be based on oneor more field-effect transistors (FETs) such as silicon-on-insulator(SOI) FETs. When a particular pole is connected to a particular throw,such a path is commonly referred to as being closed or in an ON state.When a given path between a pole and a throw is not connected, such apath is commonly referred to as being open or in an OFF state.

FIG. 2 shows that in some implementations, the RF switch 100 of FIG. 1can include an RF core 110 and an energy management (EM) core 112. TheRF core 110 can be configured to route RF signals between the first andsecond ports. In the example single-pole-double-throw (SPDT)configuration shown in FIG. 2, such first and second ports can include apole 102 a and a first throw 104 a, or the pole 102 a and a second throw104 b.

In some embodiments, EM core 112 can be configured to supply, forexample, voltage control signals to the RF core. The EM core 112 can befurther configured to provide the RF switch 100 with logic decodingand/or power supply conditioning capabilities.

In some embodiments, the RF core 110 can include one or more poles andone or more throws to enable passage of RF signals between one or moreinputs and one or more outputs of the switch 100. For example, the RFcore 110 can include a single-pole double-throw (SPDT or SP2T)configuration as shown in FIG. 2.

In the example SPDT context, FIG. 3 shows a more detailed exampleconfiguration of an RF core 110. The RF core 110 is shown to include asingle pole 102 a coupled to first and second throw nodes 104 a, 104 bvia first and second transistors (e.g., FETs) 120 a, 120 b. The firstthrow node 104 a is shown to be coupled to an RF ground via an FET 122 ato provide shunting capability for the node 104 a. Similarly, the secondthrow node 104 b is shown to be coupled to the RF ground via an FET 122b to provide shunting capability for the node 104 b.

In an example operation, when the RF core 110 is in a state where an RFsignal is being passed between the pole 102 a and the first throw 104 a,the FET 120 a between the pole 102 a and the first throw node 104 a canbe in an ON state, and the FET 120 b between the pole 102 a and thesecond throw node 104 b can be in an OFF state. For the shunt FETs 122a, 122 b, the shunt FET 122 a can be in an OFF state so that the RFsignal is not shunted to ground as it travels from the pole 102 a to thefirst throw node 104 a. The shunt FET 122 b associated with the secondthrow node 104 b can be in an ON state so that any RF signals or noisearriving at the RF core 110 through the second throw node 104 b isshunted to the ground so as to reduce undesirable interference effectsto the pole-to-first-throw operation.

Although the foregoing example is described in the context of asingle-pole-double-throw configuration, it will be understood that theRF core can be configured with other numbers of poles and throws. Forexample, there may be more than one poles, and the number of throws canbe less than or greater than the example number of two.

In the example of FIG. 3, the transistors between the pole 102 a and thetwo throw nodes 104 a, 104 b are depicted as single transistors. In someimplementations, such switching functionalities between the pole(s) andthe throw(s) can be provided by switch arm segments, where each switcharm segment includes a plurality of transistors such as FETs.

An example RF core configuration 130 of an RF core having such switcharm segments is shown in FIG. 4. In the example, the pole 102 a and thefirst throw node 104 a are shown to be coupled via a first switch armsegment 140 a. Similarly, the pole 102 a and the second throw node 104 bare shown to be coupled via a second switch arm segment 140 b. The firstthrow node 104 a is shown to be capable of being shunted to an RF groundvia a first shunt arm segment 142 a. Similarly, the second throw node104 b is shown to be capable of being shunted to the RF ground via asecond shunt arm segment 142 b.

In an example operation, when the RF core 130 is in a state where an RFsignal is being passed between the pole 102 a and the first throw node104 a, all of the FETs in the first switch arm segment 140 a can be inan ON state, and all of the FETs in the second switch arm segment 104 bcan be in an OFF state. The first shunt arm 142 a for the first thrownode 104 a can have all of its FETs in an OFF state so that the RFsignal is not shunted to ground as it travels from the pole 102 a to thefirst throw node 104 a. All of the FETs in the second shunt arm 142 bassociated with the second throw node 104 b can be in an ON state sothat any RF signals or noise arriving at the RF core 130 through thesecond throw node 104 b is shunted to the ground so as to reduceundesirable interference effects to the pole-to-first-throw operation.

Again, although described in the context of an SP2T configuration, itwill be understood that RF cores having other numbers of poles andthrows can also be implemented.

In some implementations, a switch arm segment (e.g., 140 a, 140 b, 142a, 142 b) can include one or more semiconductor transistors such asFETs. In some embodiments, an FET may be capable of being in a firststate or a second state and can include a gate, a drain, a source, and abody (sometimes also referred to as a substrate. In some embodiments, anFET can include a metal-oxide-semiconductor field effect transistor(MOSFET). In some embodiments, one or more FETs can be connected inseries forming a first end and a second end such that an RF signal canbe routed between the first end and the second end when the FETs are ina first state (e.g., ON state).

At least some of the present disclosure relates to how an FET or a groupof FETs can be controlled to provide switching functionalities indesirable manners. FIG. 5 schematically shows that in someimplementations, such controlling of an FET 120 can be facilitated by acircuit 150 configured to bias and/or couple one or more portions of theFET 120. In some embodiments, such a circuit 150 can include one or morecircuits configured to bias and/or couple a gate of the FET 120, biasand/or couple a body of the FET 120, and/or couple a source/drain of theFET 120.

Schematic examples of how such biasing and/or coupling of differentparts of one or more FETs are described in reference to FIG. 6. In FIG.6, a switch arm segment 140 (that can be, for example, one of theexample switch arm segments 140 a, 140 b, 142 a, 142 b of the example ofFIG. 4) between nodes 144, 146 is shown to include a plurality of FETs120. Operations of such FETs can be controlled and/or facilitated by agate bias/coupling circuit 150 a, and a body bias/coupling circuit 150c, and/or a source/drain coupling circuit 150 b.

Gate Bias/Coupling Circuit

In the example shown in FIG. 6, the gate of each of the FETs 120 can beconnected to the gate bias/coupling circuit 150 a to receive a gate biassignal and/or couple the gate to another part of the FET 120 or theswitch arm 140. In some implementations, designs or features of the gatebias/coupling circuit 150 a can improve performance of the switch arm140. Such improvements in performance can include, but are not limitedto, device insertion loss, isolation performance, power handlingcapability and/or switching device linearity.

Body Bias/Coupling Circuit

As shown in FIG. 6, the body of each FET 120 can be connected to thebody bias/coupling circuit 150 c to receive a body bias signal and/orcouple the body to another part of the FET 120 or the switch arm 140. Insome implementations, designs or features of the body bias/couplingcircuit 150 c can improve performance of the switch arm 140. Suchimprovements in performance can include, but are not limited to, deviceinsertion loss, isolation performance, power handling capability and/orswitching device linearity.

Source/Drain Coupling Circuit

As shown in FIG. 6, the source/drain of each FET 120 can be connected tothe coupling circuit 150 b to couple the source/drain to another part ofthe FET 120 or the switch arm 140. In some implementations, designs orfeatures of the coupling circuit 150 b can improve performance of theswitch arm 140. Such improvements in performance can include, but arenot limited to, device insertion loss, isolation performance, powerhandling capability and/or switching device linearity.

Examples of Switching Performance Parameters

Insertion Loss

A switching device performance parameter can include a measure ofinsertion loss. A switching device insertion loss can be a measure ofthe attenuation of an RF signal that is routed through the RF switchingdevice. For example, the magnitude of an RF signal at an output port ofa switching device can be less than the magnitude of the RF signal at aninput port of the switching device. In some embodiments, a switchingdevice can include device components that introduce parasiticcapacitance, inductance, resistance, or conductance into the device,contributing to increased switching device insertion loss. In someembodiments, a switching device insertion loss can be measured as aratio of the power or voltage of an RF signal at an input port to thepower or voltage of the RF signal at an output port of the switchingdevice. Decreased switching device insertion loss can be desirable toenable improved RF signal transmission.

Isolation

A switching device performance parameter can also include a measure ofisolation. Switching device isolation can be a measure of the RFisolation between an input port and an output port an RF switchingdevice. In some embodiments, it can be a measure of the RF isolation ofa switching device while the switching device is in a state where aninput port and an output port are electrically isolated, for examplewhile the switching device is in an OFF state. Increased switchingdevice isolation can improve RF signal integrity. In certainembodiments, an increase in isolation can improve wireless communicationdevice performance.

Intermodulation Distortion

A switching device performance parameter can further include a measureof intermodulation distortion (IMD) performance. Intermodulationdistortion (IMD) can be a measure of non-linearity in an RF switchingdevice.

IMD can result from two or more signals mixing together and yieldingfrequencies that are not harmonic frequencies. For example, suppose thattwo signals have fundamental frequencies f₁ and f₂ (f₂>f₁) that arerelatively close to each other in frequency space. Mixing of suchsignals can result in peaks in frequency spectrum at frequenciescorresponding to different products of fundamental and harmonicfrequencies of the two signals. For example, a second-orderintermodulation distortion (also referred to as IMD2) is typicallyconsidered to include frequencies f₁+f₂ f₂−f₁, 2f₁, and 2f₂. Athird-order IMD (also referred to as IMD3) is typically considered toinclude 2f₁+f₂, 2f₁−f₂, f₁+2f₂, f₁−2f₂. Higher order products can beformed in similar manners.

In general, as the IMD order number increases, power levels decrease.Accordingly, second and third orders can be undesirable effects that areof particular interest. Higher orders such as fourth and fifth orderscan also be of interest in some situations.

In some RF applications, it can be desirable to reduce susceptibility tointerference within an RF system. Non linearity in RF systems can resultin introduction of spurious signals into the system. Spurious signals inthe RF system can result in interference within the system and degradethe information transmitted by RF signals. An RF system having increasednon-linearity can demonstrate increased susceptibility to interference.Non-linearity in system components, for example switching devices, cancontribute to the introduction of spurious signals into the RF system,thereby contributing to degradation of overall RF system linearity andIMD performance.

In some embodiments, RF switching devices can be implemented as part ofan RF system including a wireless communication system. IMD performanceof the system can be improved by increasing linearity of systemcomponents, such as linearity of an RF switching device. In someembodiments, a wireless communication system can operate in a multi-bandand/or multi-mode environment. Improvement in intermodulation distortion(IMD) performance can be desirable in wireless communication systemsoperating in a multi-band and/or multi-mode environment. In someembodiments, improvement of a switching device IMD performance canimprove the IMD performance of a wireless communication system operatingin a multi-mode and/or multi-band environment.

Improved switching device IMD performance can be desirable for wirelesscommunication devices operating in various wireless communicationstandards, for example for wireless communication devices operating inthe LTE communication standard. In some RF applications, it can bedesirable to improve linearity of switching devices operating inwireless communication devices that enable simultaneous transmission ofdata and voice communication. For example, improved IMD performance inswitching devices can be desirable for wireless communication devicesoperating in the LTE communication standard and performing simultaneoustransmission of voice and data communication (e.g., SVLTE).

High Power Handling Capability

In some RF applications, it can be desirable for RF switching devices tooperate under high power while reducing degradation of other deviceperformance parameters. In some embodiments, it can be desirable for RFswitching devices to operate under high power with improvedintermodulation distortion, insertion loss, and/or isolationperformance.

In some embodiments, an increased number of transistors can beimplemented in a switch arm segment of a switching device to enableimproved power handling capability of the switching device. For example,a switch arm segment can include an increased number of FETs connectedin series, an increased FET stack height, to enable improved deviceperformance under high power. However, in some embodiments, increasedFET stack height can degrade the switching device insertion lossperformance.

Examples of FET Structures and Fabrication Process Technologies

A switching device can be implemented on-die, off-die, or somecombination thereon. A switching device can also be fabricated usingvarious technologies. In some embodiments, RF switching devices can befabricated with silicon or silicon-on-insulator (SOI) technology.

As described herein, an RF switching device can be implemented usingsilicon-on-insulator (SOI) technology. In some embodiments, SOItechnology can include a semiconductor substrate having an embeddedlayer of electrically insulating material, such as a buried oxide layerbeneath a silicon device layer. For example, an SOI substrate caninclude an oxide layer embedded below a silicon layer. Other insulatingmaterials known in the art can also be used.

Implementation of RF applications, such as an RF switching device, usingSOI technology can improve switching device performance. In someembodiments, SOI technology can enable reduced power consumption.Reduced power consumption can be desirable in RF applications, includingthose associated with wireless communication devices. SOI technology canenable reduced power consumption of device circuitry due to decreasedparasitic capacitance of transistors and interconnect metallization to asilicon substrate. Presence of a buried oxide layer can also reducejunction capacitance or use of high resistivity substrate, enablingreduced substrate related RF losses. Electrically isolated SOItransistors can facilitate stacking, contributing to decreased chipsize.

In some SOI FET configurations, each transistor can be configured as afinger-based device where the source and drain are rectangular shaped(in a plan view) and a gate structure extends between the source anddrain like a rectangular shaped finger. FIGS. 7A and 7B show plan andside sectional views of an example finger-based FET device implementedon SOI. As shown, FET devices described herein can include a p-type FETor an n-type FET. Thus, although some FET devices are described hereinas p-type devices, it will be understood that various conceptsassociated with such p-type devices can also apply to n-type devices.

As shown in FIGS. 7A and 7B, a pMOSFET can include an insulator layerformed on a semiconductor substrate. The insulator layer can be formedfrom materials such as silicon dioxide or sapphire. An n-well is shownto be formed in the insulator such that the exposed surface generallydefines a rectangular region. Source (S) and drain (D) are shown to bep-doped regions whose exposed surfaces generally define rectangles. Asshown, S/D regions can be configured so that source and drainfunctionalities are reversed.

FIGS. 7A and 7B further show that a gate (G) can be formed on the n-wellso as to be positioned between the source and the drain. The examplegate is depicted as having a rectangular shape that extends along withthe source and the drain. Also shown is an n-type body contact.Formations of the rectangular shaped well, source and drain regions, andthe body contact can be achieved by a number of known techniques. Insome embodiments, the source and drain regions can be formed adjacent tothe ends of their respective upper insulator layers, and the junctionsbetween the body and the source/drain regions on the opposing sides ofthe body can extend substantially all the way down to the top of theburied insulator layer. Such a configuration can provide, for example,reduced source/drain junction capacitance. To form a body contact forsuch a configuration, an additional gate region can be provided on theside so as to allow, for example, an isolated P+ region to contact thePwell.

FIGS. 8A and 8B show plan and side sectional views of an example of amultiple-finger FET device implemented on SOI. Formations of rectangularshaped n-well, rectangular shaped p-doped regions, rectangular shapedgates, and n-type body contact can be achieved in manners similar tothose described in reference to FIGS. 7A and 7B.

The example multiple-finger FET device of FIGS. 8A and 8B can be made tooperate such that a drain of one FET acts as a source of its neighboringFET. Thus, the multiple-finger FET device as a whole can provide avoltage-dividing functionality. For example, an RF signal can beprovided at one of the outermost p-doped regions (e.g., the leftmostp-doped region); and as the signal passes through the series of FETs,the signal's voltage can be divided among the FETs. In such an example,the rightmost p-doped region can act as an overall drain of themulti-finger FET device.

In some implementations, a plurality of the foregoing multi-finger FETdevices can be connected in series as a switch to, for example, furtherfacilitate the voltage-dividing functionality. A number of suchmulti-finger FET devices can be selected based on, for example, powerhandling requirement of the switch.

Examples of Bias and/or Coupling Configurations for Improved Performance

Described herein are various examples of how FET-based switch circuitscan be biased and/or coupled to yield one or more performanceimprovements. In some embodiments, such biasing/coupling configurationscan be implemented in SOI FET-based switch circuits. It will beunderstood that some of the example biasing/coupling configurations canbe combined to yield a combination of desirable features that may not beavailable to the individual configurations. It will also be understoodthat, although described in the context of RF switching applications,one or more features described herein can also be applied to othercircuits and devices that utilize FETs such as SOI FETs.

Example Configuration

In some radio-frequency (RF) applications, it is desirable to utilizeswitches having high linearity, as well as management of intermodulationdistortion (IMD) such as IMD3 and IMD2. Such switch-related performancefeatures can contribute significantly to system-level performance ofcellular devices. In the context of silicon-on-oxide (SOI) switches,factors such as substrate-coupling (sometimes also referred to assubstrate parasitics) and SOI-process can limit the performanceachievable.

Such a limitation in performance of SOI switches can be addressed byextensive substrate crosstalk reduction techniques such as capacitiveguard rings, and/or trap rich or deep trench isolation techniques. Suchtechniques typically have associated with them undesirable features suchas being expensive, requiring relatively large areas, and requiringadditional process steps. Also, such technique can yield a desirableeffect that is limited to an isolation feature.

In some implementations, performance of SOI switches can be improved byovercoming or reducing the foregoing effects associated with substrateparasitics and/or process variables. By way of an example, FIG. 9 showsa switch circuit 200 having an SOI FET 120 configured to provideswitching functionality between first and second nodes 144, 146. A gateterminal of the FET 120 is shown to be biased by a bias voltage Vgprovided by a gate bias circuit, and a body terminal of the FET 120 isshown to be biased by a bias voltage Vsb1 provided by a body biascircuit. In some embodiments, the body terminal can be connected to asource terminal, so that both terminals are provided with the biasvoltage Vsb1.

In some embodiments, the source terminal of the FET 120 can be connectedto a non-linear capacitor 202. In embodiments where the FET 120 is aMOSFET device, the capacitor 202 can be a MOSFET capacitor configured toprovide one or more desired capacitance values. The MOS capacitor 202can be configured to generate one or more harmonics to cancel or reducenon-linearity effects generated by the MOSFET 120. The MOS cap 202 isshown to be biased by Vsb2. In some embodiments, either or both of Vsb1and Vsb2 can be adjusted to yield a desired level of non-linearitycancelation. Although described in the context of the source side of theFET 120, it will be understood that the MOS cap 202 can also beimplemented on the drain side of the FET.

FIG. 10 shows a switch arm 210 having a plurality of the switch circuits200 described in reference to FIG. 9. In the example, N such switchcircuits are shown to be connected in series in a stack to provideswitching functionality between terminals 144, 146. In some embodiments,the number (N) of FETs in such a stack can be selected based on powerbeing transferred between the terminals 144, 146. For example, N can belarger for situations involving higher power.

In some embodiments, gate bias voltages (Vg) for the plurality of FETs120 can be substantially the same, and be provided by a common gate biascircuit. Such a common gate bias voltage Vg is shown to be provided tothe gates via a gate resistor Rg. Similarly, body bias voltages (Vsb1)for the plurality of FETs 120 can be substantially the same, and beprovided by a common body bias circuit. Similarly, body bias voltages(Vsb2) for the plurality of MOS capacitors 202 can be substantially thesame, and be provided by a common body bias circuit (not shown). In someimplementations, some or all of the bodies of the FETs 120 and/or theMOS capacitors 202 can be biased separately. Such a configuration can bebeneficial in some situations, depending on the frequency of operation.

In some implementations, the foregoing example configurations describedin reference to FIGS. 9 and 10 can allow significant or substantiallycomplete cancelation of non-linearity effects associated with one ormore SOI FET based RF switches. In some embodiments, such configurationscan be implemented so that minimal or relatively little additional areais required.

Examples of Implementations in Products

Various examples of FET-based switch circuits and bias/couplingconfigurations described herein can be implemented in a number ofdifferent ways and at different product levels. Some of such productimplementations are described by way of examples.

Semiconductor Die Implementation

FIGS. 11A-11D schematically show non-limiting examples of suchimplementations on one or more semiconductor die. FIG. 11A shows that insome embodiments, a switch circuit 120 and a bias/coupling circuit 150having one or more features as described herein can be implemented on adie 800. FIG. 11B shows that in some embodiments, at least some of thebias/coupling circuit 150 can be implemented outside of the die 800 ofFIG. 11A.

FIG. 11C shows that in some embodiments, a switch circuit 120 having oneor more features as described herein can be implemented on a first die800 a, and a bias/coupling circuit 150 having one or more features asdescribed herein can be implemented on a second die 800 b. FIG. 11Dshows that in some embodiments, at least some of the bias/couplingcircuit 150 can be implemented outside of the first die 800 a of FIG.11C.

Packaged Module Implementation

In some embodiments, one or more die having one or more featuresdescribed herein can be implemented in a packaged module. An example ofsuch a module is shown in FIGS. 12A (plan view) and 12B (side view).Although described in the context of both of the switch circuit and thebias/coupling circuit being on the same die (e.g., example configurationof FIG. 11A), it will be understood that packaged modules can be basedon other configurations.

A module 810 is shown to include a packaging substrate 812. Such apackaging substrate can be configured to receive a plurality ofcomponents, and can include, for example, a laminate substrate. Thecomponents mounted on the packaging substrate 812 can include one ormore dies. In the example shown, a die 800 having a switching circuit120 and a bias/coupling circuit 150 is shown to be mounted on thepackaging substrate 812. The die 800 can be electrically connected toother parts of the module (and with each other where more than one dieis utilized) through connections such as connection-wirebonds 816. Suchconnection-wirebonds can be formed between contact pads 818 formed onthe die 800 and contact pads 814 formed on the packaging substrate 812.In some embodiments, one or more surface mounted devices (SMDs) 822 canbe mounted on the packaging substrate 812 to facilitate variousfunctionalities of the module 810.

In some embodiments, the packaging substrate 812 can include electricalconnection paths for interconnecting the various components with eachother and/or with contact pads for external connections. For example, aconnection path 832 is depicted as interconnecting the example SMD 822and the die 800. In another example, a connection path 832 is depictedas interconnecting the SMD 822 with an external-connection contact pad834. In yet another example a connection path 832 is depicted asinterconnecting the die 800 with ground-connection contact pads 836.

In some embodiments, a space above the packaging substrate 812 and thevarious components mounted thereon can be filled with an overmoldstructure 830. Such an overmold structure can provide a number ofdesirable functionalities, including protection for the components andwirebonds from external elements, and easier handling of the packagedmodule 810.

FIG. 13 shows a schematic diagram of an example switching configurationthat can be implemented in the module 810 described in reference toFIGS. 12A and 12B. In the example, the switch circuit 120 is depicted asbeing an SP9T switch, with the pole being connectable to an antenna andthe throws being connectable to various Rx and Tx paths. Such aconfiguration can facilitate, for example, multi-mode multi-bandoperations in wireless devices.

The module 810 can further include an interface for receiving power(e.g., supply voltage VDD) and control signals to facilitate operationof the switch circuit 120 and/or the bias/coupling circuit 150. In someimplementations, supply voltage and control signals can be applied tothe switch circuit 120 via the bias/coupling circuit 150.

Wireless Device Implementation

In some implementations, a device and/or a circuit having one or morefeatures described herein can be included in an RF device such as awireless device. Such a device and/or a circuit can be implementeddirectly in the wireless device, in a modular form as described herein,or in some combination thereof. In some embodiments, such a wirelessdevice can include, for example, a cellular phone, a smart-phone, ahand-held wireless device with or without phone functionality, awireless tablet, etc.

FIG. 14 schematically depicts an example wireless device 900 having oneor more advantageous features described herein. In the context ofvarious switches and various biasing/coupling configurations asdescribed herein, a switch 120 and a bias/coupling circuit 150 can bepart of a module 810. In some embodiments, such a switch module canfacilitate, for example, multi-band multip-mode operation of thewireless device 900.

In the example wireless device 900, a power amplifier (PA) module 916having a plurality of PAs can provide an amplified RF signal to theswitch 120 (via a duplexer 920), and the switch 120 can route theamplified RF signal to an antenna. The PA module 916 can receive anunamplified RF signal from a transceiver 914 that can be configured andoperated in known manners. The transceiver can also be configured toprocess received signals. The transceiver 914 is shown to interact witha baseband sub-system 910 that is configured to provide conversionbetween data and/or voice signals suitable for a user and RF signalssuitable for the transceiver 914. The transceiver 914 is also shown tobe connected to a power management component 906 that is configured tomanage power for the operation of the wireless device 900. Such a powermanagement component can also control operations of the basebandsub-system 910 and the module 810.

The baseband sub-system 910 is shown to be connected to a user interface902 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 910 can also beconnected to a memory 904 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In some embodiments, the duplexer 920 can allow transmit and receiveoperations to be performed simultaneously using a common antenna (e.g.,924). In FIG. 14, received signals are shown to be routed to “Rx” paths(not shown) that can include, for example, a low-noise amplifier (LNA).

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, a wireless device does not needto be a multi-band device. In another example, a wireless device caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

General Comments

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Detailed Description using thesingular or plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While certain embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. A radio-frequency switch comprising: at least onefield-effect transistor disposed between a first node and a second node,each of the at least one field-effect transistor having a respectivesource, drain, gate, and body; and a compensation circuit connected tothe respective drain of the at least one field-effect transistor, thecompensation circuit configured to compensate a non-linearity effectgenerated by the at least one field-effect transistor.
 2. The switch ofclaim 1 wherein the at least one field-effect transistor is asilicon-on-insulator field-effect transistor.
 3. The switch of claim 1wherein the compensation circuit includes a non-linear capacitorconnected at a first end to both the source of a first field-effecttransistor of the at least one field-effect transistor and the drain ofa second field-effect transistor of the at least one field-effecttransistor, the non-linear capacitor further being connected at a secondend to a ground reference.
 4. The switch of claim 3 wherein thenon-linear capacitor includes a metal-oxide-semiconductor capacitor. 5.The switch of claim 4 wherein the metal-oxide-semiconductor capacitor isconfigured to generate one or more harmonics to substantially cancel thenon-linearity effect generated by the at least one field-effecttransistor.
 6. The switch of claim 5 wherein themetal-oxide-semiconductor capacitor includes a field-effect transistorstructure.
 7. The switch of claim 6 wherein the one or more harmonicsgenerated by the metal-oxide-semiconductor capacitor is controlled atleast in part by a body bias signal provided to the field-effecttransistor structure of the metal-oxide-semiconductor capacitor.
 8. Theswitch of claim 1 further comprising a gate bias circuit connected toand configured to provide a bias signal to the gate of the at least onefield-effect-transistor.
 9. The switch of claim 1 further comprising abody bias circuit connected to and configured to provide a bias signalto the body of the at least one field-effect-transistor.
 10. The switchof claim 1 wherein the at least one field-effect transistor includes Nfield-effect transistors connected in series, the quantity N selected toallow the switch to handle a power level of an RF signal received at thefirst node.
 11. A method for operating a radio-frequency (RF) switch,the method comprising: controlling at least one field-effect transistordisposed between first and second nodes so that the at least onefield-effect transistor is in an ON state or an OFF state; andcompensating a non-linear effect of the field-effect transistor byapplying a non-linear signal to a source or a drain of the at least onefield-effect transistor.
 12. The method of claim 11 wherein saidcompensating the non-linear effect is performed using a non-linearcapacitor.
 13. The method of claim 12 wherein said compensating thenon-linear effect involves generating one or more harmonics using thenon-linear capacitor to substantially cancel the non-linearity effectgenerated by the at least one field-effect transistor.
 14. The method ofclaim 13 further comprising controlling the one or more harmonics atleast in part by providing a body bias signal to the non-linearcapacitor.
 15. The method of claim 12 wherein the non-linear capacitoris connected at a first end to a source of a first field-effecttransistor of the at least one field-effect transistor and a drain of asecond field-effect transistor of the at least one field-effecttransistor, the non-linear capacitor further being connected at a secondend to a ground reference.
 16. The method of claim 12 further comprisingproviding a bias signal to a gate of the field-effect transistor. 17.The method of claim 12 further comprising providing a bias signal to abody of the field-effect transistor.
 18. A wireless device comprising: atransceiver configured to process radio-frequency signals; an antenna incommunication with the transceiver configured to facilitate transmissionof an amplified radio-frequency signal; a power amplifier connected tothe transceiver and configured to generate the amplified radio-frequencysignal; and a switch connected to the antenna and the power amplifierand configured to selectively route the amplified radio-frequency signalto the antenna, the switch including at least one field-effecttransistor, the switch further including a compensation circuitconnected to a respective source or a respective drain of each of the atleast one field-effect transistor, the compensation circuit configuredto compensate a non-linearity effect generated by the at least onefield-effect transistor.
 19. The wireless device of claim 18 wherein thecompensation circuit includes a non-linear capacitor connected at afirst end to both the source of a first field-effect transistor of theat least one field-effect transistor and the drain of a secondfield-effect transistor of the at least one field-effect transistor, thenon-linear capacitor being further connected at a second end to a groundreference.
 20. The wireless device of claim 19 wherein the non-linearcapacitor includes a metal-oxide-semiconductor capacitor including afield-effect transistor structure.